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| FDC6392S April 2002 FDC6392S 20V Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description The FDC6392S combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SSOT-6 package. This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low onstate resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. Features MOSFET: * -2.2 A, -20V. RDS(ON) = 150 m @ VGS = -4.5V RDS(ON) = 200 m @ VGS = -2.5V * Low Gate Charge (3.7nC typ) * Compact industry standard SuperSOT-6 package Schottky: * VF < 0.45 V @ 1 A S1 D1 D2 1 G2 S2 6 5 4 2 3 SuperSOT TM -6 Pin 1 G1 SuperSOTTM-6 Absolute Maximum Ratings Symbol VDSS VGSS ID PD MOSFET Drain-Source Voltage MOSFET Gate-Source Voltage Drain Current - Continuous - Pulsed TA=25oC unless otherwise noted Parameter Ratings -20 12 (Note 1a) Units V V A W -2.2 -6 0.96 0.9 0.7 -55 to +150 20 1 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG VRRM IO Operating and Storage Junction Temperature Range Schottky Repetitive Peak Reverse Voltage Schottky Average Forward Current (Note 1a) C V A Thermal Characteristics RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 130 60 C/W Package Marking and Ordering Information Device Marking .392 Device FDC6392S Reel Size 7'' Tape width 8mm Quantity 3000 units 2002 Fairchild Semiconductor Corporation FDC6392S Rev C(W) FDC6392S Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSSF IGSSR VGS(th) VGS(th) TJ RDS(on) TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse (Note 2) Test Conditions ID = -250 A VGS = 0 V, ID = -250 A, Referenced to 25C VDS = -16 V, VGS = 12 V, VGS = -12 V, VGS = 0 V VDS = 0 V VDS = 0 V Min Typ Max Units -20 -16 -1 100 -100 -0.6 -1.0 3 101 152 132 -6 6 369 80 39 7.6 8 11 13 4 16 20 23 8 5.2 -1.5 V mV/C A nA nA V mV/C 150 200 211 m Off Characteristics On Characteristics Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance (Note 2) ID = -250 A VDS = VGS, ID = -250 A, Referenced to 25C VGS = -4.5 V, ID = -2.2 A VGS = -2.5 V, ID = -1.8 A VGS=-4.5 V, ID =-2.2 A, TJ=125C VGS = -4.5 V, VDS = -5 V VDS = -5 V, ID = -2.2 A ID(on) gFS Ciss Coss Crss RG td(on) tr td(off) tf Qg Qgs Qgd IS VSD trr Qrr A S pF pF pF ns ns ns ns nC nC nC -0.8 -0.8 5.4 1.2 -1.2 A V nS nC Dynamic Characteristics VDS = -10 V, f = 1.0 MHz V GS = 0 V, VGS = -15 mV, f = 1.0 MHz VDD = -10 V, ID = -1 A, VGS = -4.5 V, RGEN = 6 Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = -10 V, VGS = -4.5 V ID = -2.2 A, 3.7 1 1 Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = -0.8 A(Note 2) IF = -2.2 A, diF/dt = 100 A/s Schottky Diode Characteristics IR Reverse Leakage VR = 20 V VR = 10V VF Forward Voltage IF = 500mA IF = 1 A TJ = 25C TJ = 100C TJ = 25C TJ = 100C TJ = 25C TJ = 100C TJ = 25C TJ = 100C 148 14 55 5.2 0.34 0.26 0.40 0.35 400 20 200 10 0.4 0.35 0.45 0.42 V A mA A mA V FDC6392S Rev C(W) FDC6392S Electrical Characteristics TA = 25C unless otherwise noted Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 130 C/W when mounted on a 0.125 2 in pad of 2 oz. copper. b) 140C/W when mounted 2 on a .004 in pad of 2 oz copper c) 180C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDC6392S Rev C(W) FDC6392S Typical Characteristics 6 2.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = -4.5V -3.0V -2.5V 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0 0.5 1 1.5 2 2.5 -ID, DRAIN-SOURCE CURRENT (A) 5 4 3 VGS = -2.0V -3.5V -2.0V 2 1 0 -VDS, DRAIN-SOURCE VOLTAGE (V) -2.5V -3.0V -3.5V -4.5V 0 1 2 3 4 5 6 - ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.35 RDS(ON), ON-RESISTANCE (OHM) 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = -2.2A VGS = -4.5V ID = -1.1A 0.3 0.25 1.4 1.2 TA = 125oC 0.2 0.15 0.1 0.05 1 TA = 25oC 0.8 0.6 -50 -25 0 25 50 75 100 o 125 150 1 2 3 4 5 TJ, JUNCTION TEMPERATURE ( C) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 5 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 -IS, REVERSE DRAIN CURRENT (A) VGS = 0V 1 TA = 125oC VDS = -5V -ID, DRAIN CURRENT (A) 4 TA = -55 C 125oC o 25oC 3 0.1 25oC 0.01 -55oC 0.001 2 1 0 0.5 1 1.5 2 2.5 3 -VGS, GATE TO SOURCE VOLTAGE (V) 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDC6392S Rev C(W) FDC6392S Typical Characteristics 5 600 ID = -2.2A -VGS, GATE-SOURCE VOLTAGE (V) 4 VDS = -5V -15V -10V CAPACITANCE (pF) 500 f = 1MHz VGS = 0 V CISS 400 300 200 3 2 COSS 1 100 CRSS 0 0 0 1 2 3 Qg, GATE CHARGE (nC) 4 5 0 5 10 15 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. IF, FORWARD LEAKAGE CURRENT (A) 1 Figure 8. Capacitance Characteristics. 1.E-01 IR, REVERSE LEAKAGE CURRENT (A) TJ = 125oC 1.E-02 TJ = 125oC 0.1 TJ = 25oC 0.01 1.E-03 TJ = 25oC 1.E-04 0.001 0 0.1 0.2 0.3 0.4 0.5 VF, FORWARD VOLTAGE (V) 1.E-05 0 5 10 15 20 VR, REVERSE VOLTAGE (V) Figure 9. Schottky Diode Forward Voltage. Figure 10. Schottky Diode Reverse Current. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 RJA(t) = r(t) + RJA RJA = 180 C/W P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDC6392S Rev C(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx Bottomless CoolFET CROSSVOLT DenseTrench DOME EcoSPARK E2CMOSTM EnSignaTM FACT FACT Quiet Series DISCLAIMER FAST a FASTr FRFET GlobalOptoisolator GTO HiSeC I2C ISOPLANAR LittleFET MicroFET MicroPak MICROWIRE OPTOLOGIC a OPTOPLANAR PACMAN POP Power247 PowerTrench a QFET QS QT Optoelectronics Quiet Series SILENT SWITCHER a UHC SMART START UltraFET a SPM VCX STAR*POWER Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogic TruTranslation STAR*POWER is used under license FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. H5 |
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